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EtronTech
Features
* Single power supply voltage of 1.65V to 1.95V * Power down features using CE1# and CE2 * Low power dissipation * Data retention supply voltage: 0.9V to 1.95V * Direct TTL compatibility for all input and output * Wide operating temperature range: -40C to 85C * Standby current @ VDD = 1.95 V
ISB Maximum EM584161BA/BC-70/85 EM584161BA-70E/85E 8 A 80 A
D GND DQ11 A17 A7
EM584161
256K x 16 Low Power SRAM
Rev 2.0 Pin Configuration
48-Ball BGA (CSP), Top View
1 2 3 4 5 6
11/2003
A
LB#
OE#
A0
A1
A2
CE2
B
DQ8
UB#
A3
A4
CE1#
DQ0
C
DQ9
DQ10
A5
A6
DQ1
DQ2
DQ3
VDD
E
VDD
DQ12
NC
A16
DQ4
GN D
F
DQ14
DQ13
A14
A15
DQ5
DQ6
Ordering Information
Part Number
EM584161BC-70 EM584161BA-70 EM584161BA-70E EM584161BC-85 EM584161BA-85 EM584161BA-85E
Speed
70 ns 70 ns 70 ns 85 ns 85 ns 85 ns
ISB
8 A 8 A 80 A 8 A 8 A 80 A
Package
6x8 BGA 8x10 BGA 8x10 BGA 6x8 BGA 8x10 BGA 8x10 BGA
G
DQ15
NC
A12
A13
WE#
DQ7
H
NC
A8
A9
A10
A11
NC
Pin Description
Symbol
A0 - A17 DQ0 - DQ15 CE1#, CE2 OE# WE# LB#, UB# GND VDD NC
Function
Address Inputs Data Inputs / Outputs Chip Enable Inputs Output Enable Read / Write Control Input Data Byte Control Inputs Ground Power Supply No Connection
Overview
The EM584161 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced CMOS technology. This Device operates from a single 1.65V to 1.95V power supply. Advanced circuit technology provides both high speed and low power. It is automatically placed in low-power mode when chip enable (CE1#) is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are used to select the device and for data retention control, and output enable (OE#) provides fast memory access. Data byte control pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating range from -40C to 85C, the EM584161 can be used in environments exhibiting extreme temperature conditions.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C. TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
EtronTech
Block Diagram
EM584161
A0 MEMORY CELL ARRAY 2,048X128X16 (4,194,304) A17
VDD
GND
DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
SENSE AMP
DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 COLUMN ADDRESS DECODER
WE# UB#
LB#
OE# CE1# CE2
POWER DOWN CIRCUIT
2
Rev 2.0
Nov. 2003
EtronTech
Operating Mode
Mode CE1# CE2 OE# WE# LB# L Read L H L H H L L Write L H X L H L L Output Deselect L H Standby X L X X X X H X X X X X H X H X High-Z High-Z H H H X UB# L L H L L H X High-Z High-Z DQ0~DQ7 DOUT High-Z DOUT DIN High-Z DIN DQ8~DQ15 DOUT DOUT High-Z DIN DIN High-Z
EM584161
Note: X = don't care. H=logic high. L=logic low. Absolute Maximum Ratings
Supply voltage, VDD Input voltages, VIN Input and output voltages, VI/O Operating temperature, TOPR Storage temperature, TSTRG Soldering Temperature (10s), TSOLDER Power dissipation, PD -0.5 to +2.5V -0.5 to +2.5V -0.5 to VDD +0.5V -40 to +85C -65 to +150C 240C 0.6 W
DC Recommended Operating Conditions (Ta=-40C to 85C)
Symbol VDD VIH VIL Parameter Power Supply Voltage Input High Voltage Input Low Voltage Min. 1.65 1.4 - 0.2
(2)
Typ. 1.8 - - -
Max. 1.95 VDD+0.2 0.4 1.95
(1)
Unit V V V V
VDR Data Retention Supply Voltage Note: (1) Overshoot : 2.7V if pulse width 20ns (2) Undershoot : -1.0V if pulse width 20ns
0.9
3
Rev 2.0
Nov. 2003
EtronTech
DC Characteristics (Ta = -40C to 85C, VDD = 1.65V to 1.95V)
Symbol Parameter Operating current @ min cycle time Operating current @ max cycle time (1s) Test Conditions CE1# = VIL and CE2 = VIH and IOUT = 0mA Other Input = VIH / VIL CE1# VDD -0.2V, or CE2 0.2V, Others inputs 0.2V or VDD -0.2V IOH = -100 A IOL = 100 A Min. Typ.
EM584161
Max.
Unit
IDD1
- -
- -
15
mA
IDD2 ISB
2
mA
Standby current
-
-
8
A
VOH VOL Notes:
Output HIGH Voltage Output LOW Voltage
VDD - 0.2V -
- -
- 0.3
V V
* Typical value are measured at Ta = 25C. ** In standby mode with CE1# VDD - 0.2V, these limits are assured for the condition CE2 VDD - 0.2V or CE2 0.2V.
Capacitance (Ta = 25C; f = 1 MHz)
Parameter Input capacitance Output capacitance Symbol CIN Min - Typ - Max 10 Unit pF Test Conditions VIN = GND
COUT 10 pF VOUT = GND - - Notes: This parameter is periodically sampled and is not 100% tested.
4
Rev 2.0
Nov. 2003
EtronTech
Read Cycle
EM584161
AC Characteristics and Operating Conditions(Ta = -40C to 85C, VDD = 1.65V to 1.95V)
EM584161 Symbol tRC tAA tCO1 tCO2 tOE tBA tLZ tOLZ tBLZ tHZ tOHZ tBHZ tOH Write Cycle EM584161 Symbol tWC tWP tCW tBW tAS tWR tWHZ tOW tDS tDH Write cycle time Write pulse width Chip Enable to end of write Data Byte Control to end of Write Address setup time Write Recovery time WE# Low to Output in High-Z WE# High to Output in Low-Z Data Setup Time Data Hold Time Parameter -85 -70 Unit - - - - - - 30 - - - ns Min Max Min Max 85 55 70 70 0 0 - 5 35 0 - - - - - - 35 - - - 70 55 60 60 0 0 - 5 30 0 Read cycle time Address access time Chip Enable (CE1#) Access Time Chip Enable (CE2) Access Time Output enable access time Data Byte Control Access Time Chip Enable Low to Output in Low-Z Output enable Low to Output in Low-Z Data Byte Control Low to Output in Low-Z Chip Enable High to Output in High-Z Output Enable High to Output in High-Z Data Byte Control High to Output in High-Z Output Data Hold Time Parameter -85 -70 Unit - 70 70 70 35 35 - - - 25 25 25 - ns Min Max Min Max 85 - - - - - 10 3 5 - - - 10 - 85 85 85 45 45 - - - 35 35 35 - 70 - - - - - 10 3 5 - - - 10
AC Test Condition
* Output load : 30pF + one TTL gate * Input pulse level : 0.2V, VDD-0.2V * Timing measurements : 0.5 x VDD * tR, tF : 5ns
5
Rev 2.0
Nov. 2003
EtronTech
Read Cycle (See Note 1)
t RC
EM584161
Addr ess
t AA
t OH
t CO1
CE 1#
CE2
t CO2 t HZ
t OE
O E# t OH Z
t BA
UB# , LB# t BLZ t OLZ t LZ t BHZ
D O UT
VALID DATA OU T
6
Rev 2.0
Nov. 2003
EtronTech
Write Cycle1 (WE# Controlled)(See Note 4)
tWC
EM584161
Address t AS tWP tW R
W E#
t CW
CE1#
CE2 t CW t BW
UB# , LB# t W HZ t OW
D OUT
(See Note2)
(See Note3)
t DS
t DH
D IN
(See Note 5)
VALID DATA IN
(See Note 5)
7
Rev 2.0
Nov. 2003
EtronTech
Write Cycle 2 (CE1# Controlled)(See Note 4)
tW C
EM584161
Addres s t AS tWP tW R
W E#
t CW
CE1#
CE2 t CW t BW
UB# , LB# t BLZ t W HZ
DOUT t LZ t DS t DH
DIN
(See Note 5)
VALID DATA IN
8
Rev 2.0
Nov. 2003
EtronTech
Write Cycle 3 (CE2 Controlled)(See Note 4)
tW C
EM584161
Addres s
t AS
tWP
tW R
W E# t CW
CE1#
CE2 t CW t W HZ
DO UT t LZ t DS t DH
DIN
(See Note 5)
VALID DATA IN
9
Rev 2.0
Nov. 2003
EtronTech
Write Cycle4 (UB#, LB# Controlled)(See Note 4)
tW C
EM584161
Addres s t AS tWP tW R
W E#
t CW
CE1#
CE2 t CW t BW
UB# , LB# t BLZ t W HZ
DO UT t LZ t DS t DH
DIN
(See Note 5)
VALID DATA IN
Note:
1. WE# remains HIGH for the read cycle. 2. If CE1# goes LOW (or CE2 goes HIGH) with or after WE# goes LOW, the outputs will remain at high impedance. 3. If CE1# goes HIGH (or CE2 goes LOW) coincident with or before WE# goes HIGH, the outputs will remain at high impedance. 4. If OE# is HIGH during the write cycle, the outputs will remain at high impedance. 5. Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be applied.
10
Rev 2.0
Nov. 2003
EtronTech
Data Retention Characteristics (Ta = -40C to 85C)
Symbol Data Retention Supply Voltage Parameter CE1# VDD - 0.2V, CE2 0.2V, VIN VDD - 0.2V or VIN 0.2V VDD = 0.9V, CE1# VDD - 0.2V, CE2 0.2V, VIN VDD - 0.2V or VIN 0.2V Min
EM584161
Typ
Max
Unit
VDR
0.9
-
1.95
V
IDR tSDR tRDR
Data Retention Current
- 0 tRC
- - -
4.0 - -
A ns ns
Chip Deselect to Data Retention Mode Time Recovery Time
CE1# Controlled Data Retention Mode
t SDR V DD 1.65V Data Retention Mode t RDR
1.4V V DR CE1#, LB#/UB# GND Note 1
CE2 Controlled Data Retention Mode
V DD 1.6 5V CE2 t SDR t RD R Data Reten tion Mode
VD R 0.4 V GND Note 2
Note:
1. CE1# VDD - 0.2V or UB# = LB# VDD - 0.2V 2. CE2 0.2V
11
Rev 2.0
Nov. 2003
EtronTech
Package Diagrams 48-Ball (6mm x 8mm) BGA Units in mm
TOP VIEW
EM584161
BOTTOM VIEW 0.10 S 0.25 S C C
PIN 1 CORNER
A
B
PIN 1 CORNER
0.30 3 4 5 6 6 5 4 3
0.05(48X) 2 1
1
2
-B0.75 3.75 -A0.20(4X)
0.10 -CSEATING PLANE
12
Rev 2.0
Nov. 2003
EtronTech
Package Diagrams 48-Ball (8mm x 10mm) BGA Units in mm
TOP VIEW
EM584161
BO TT OM VIEW 0.10 S 0.25 S C C
PIN 1 CO RNE R
A
B
PIN 1 CO RNE R
0.30 3 4 5 6 6 5 4 3
0.05(48X) 2 1
1
2
A B C
A B C
5.25
0.1
D E
D E
10 .0
0.75
F G H
F G H
-B0.75 -A3.75 8.0 0.20(4X) 0.10
0.02
0.05
0.52
0.25
D
-CSEATIN G PLANE
D
0.10
1.20 MAX
0.36
0.02 0.05
13
Rev 2.0
Nov. 2003

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